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HMC635LC4
v00.1008
GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz
Typical Applications
Features
Gain: 18.5 dB [2] P1dB: +22 dBm [2] Output IP3: +27 dBm Saturated Power: +23.5 dBm @ 15% PAE [2] Supply Voltage: +5V @ 280 mA 50 Ohm Matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm2
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
The HMC635LC4 is ideal for: * Point-to-Point Radios * Point-to-Multi-Point Radios & VSAT * LO Driver for Mixers * Military & Space
Functional Diagram General Description
The HMC635LC4 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 18.5 dB of gain, +27 dBm Output IP3, and +22 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635LC4 is capable of providing up to +23.5 dBm of saturated output power at 15% PAE. The amplifier's I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs).
Electrical Specifi cations
TA = +25 C, Vdd= Vdd1, 2, 3, 4 = +5V, Idd= Idd1 + Idd2 + Idd3 + Idd4 = 280mA
Parameter Frequency Range Gain [2] Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) [2] Output Third Order Intercept (IP3) Noise Figure
[2] [2]
[1]
Max. Units GHz dB 0.06 dB/ C dB dB dBm dBm dBm dB mA
Min.
Typ. 18 - 36
Max.
Min.
Typ. 36 - 40
15
18.5 0.045 13 10 0.06
15
17.5 0.045 7 7
19
22 23.5
16
21 21.5
22
27 7 280
21
26 7 280
Total Supply Current (Idd1 + Idd2 + Idd3 + Idd4) [1] Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical. [2] Board loss subtracted out for gain, power and noise figure measurements.
9 - 172
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC635LC4
v00.1008
GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz
Broadband Gain & Return Loss [1]
25
Gain vs. Temperature [1]
25
9
+25C - 40C
15 RESPONSE (dB)
S21 S11 S22
20
5
15
-5
10
-15
5
-25 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz)
0 16 21 26 31 36 41 FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25C - 40C
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
+25C - 40C
-5
-10
-10
-15
-15
-20
-20 16 21 26 31 36 41 FREQUENCY (GHz)
-25 16 21 26 31 36 41 FREQUENCY (GHz)
P1dB vs. Temperature [1]
26
Psat vs. Temperature [1]
26
24 P1dB (dBm) Psat (dBm)
24
22
22
20
+25C - 40C
20
+25C - 40C
18
18
16 16 21 26 31 36 41 FREQUENCY (GHz)
16 16 21 26 31 36 41 FREQUENCY (GHz)
[1] Board loss subtracted out for gain, power and noise figure measurements.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
9 - 173
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
GAIN (dB)
HMC635LC4
v00.1008
GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz
Power Compression @ 30 GHz [1]
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 40 GHz [1]
30 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 -15
Pout (dBm) Gain (dB) PAE (%)
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
30 25 20 15 10 5 0 -15
Pout (dBm) Gain (dB) PAE (%)
-10
-5
0
5
10
-10
-5
0
5
10
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
40 36 32 IP3 (dBm) 28 24 20 16 16 21 26 31 36 41 FREQUENCY (GHz)
+25 C -40 C
Noise Figure vs. Temperature [1]
15
12 NOISE FIGURE (dB)
+25 C -40 C
9
6
3
0 16 21 26 31 36 41 FREQUENCY (GHz)
Gain & Power vs. Supply Voltage @ 30 GHz [1]
26 GAIN (dB), P1dB (dBm), Psat (dBm)
Reverse Isolation vs. Temperature
0 -10
24 ISOLATION (dB) -20 -30 -40 -50 18 -60 16 4.5 -70 4.7 4.9 Vdd (V) 5.1 5.3 5.5 16 21 26 31 36 41 FREQUENCY (GHz)
+25C - 40C
22
Gain P1dB Psat
20
[1] Board loss subtracted out for gain, power and noise figure measurements.
9 - 174
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC635LC4
v00.1008
GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz
Typical Supply Current vs. Vdd
Vdd (V) 4.5 5.0 5.5 Idd (mA) 277 280
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, 2, 3, 4) Gate Bias Voltage (Vgg1,Vgg2) RF Input Power (RFIN)(Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T= 70 C) (derate 15.1 mW/C above 70 C) Thermal Resistance (channel to package base) Storage Temperature Operating Temperature +5.5V -3 to 0V 15 dBm 175 C 1.575 W 66.4 C/W -65 to +150 C -55 to +70 C
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9 - 175
286
Note: Amplifi er will operate over full voltage ranges shown above
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC635LC4
v00.1008
GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz
Pin Descriptions
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Pin Number 1, 2, 4 - 8, 10, 12 - 15, 17 - 19, 24, Ground Paddle 3 16
Function GND
Description These pins and package bottom must be connected to RF/DC ground This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms.
Interface Schematic
RFIN RFOUT
9, 11
Vgg1, Vgg2
Gate control for amplifier, please follow "MMIC Amplifier Biasing Procedure" application note. See assembly diagram for required external components.
20 - 23
Vdd4 - Vdd1
Power Supply Voltage for the amplifier. See assembly diagram for required external components.
Application Circuit
9 - 176
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC635LC4
v00.1008
GaAs PHEMT MMIC DRIVER AMPLIFIER, 18 - 40 GHz
Evaluation PCB
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9 - 177
List of Materials for Evaluation 122763 [1]
Item J1 - J2 VD1 - VD4, VGG1, VGG2 C1 - C6 C7 - C12 C13 - C18 U1 PCB [2] Description 2.92 mm PC Mount K-Connector DC Pin 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 F Capacitor, Tantalum, Case A HMC635LC4 Driver Amplifier 122761 Evaluation PCB [3]
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR [3] Due to the very high frequency operation of this product a custom LC4 PCB footprint and solder stencil are required for this design. Performance shown in this data sheet was produced using this custom footprint. DO NOT USE Hittite's standard LC4 footprint. Please contact Applications for details.
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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